发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a <11-20> direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or −30 degrees. |
申请公布号 |
US2012181551(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201213348781 |
申请日期 |
2012.01.12 |
申请人 |
MIYAHARA SHINICHIRO;TAKAYA HIDEFUMI;SUGIMOTO MASAHIRO;WATANABE YUKIHIKO;SOEJIMA NARUMASA;ISHIKAWA TSUYOSHI;TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION |
发明人 |
MIYAHARA SHINICHIRO;TAKAYA HIDEFUMI;SUGIMOTO MASAHIRO;WATANABE YUKIHIKO;SOEJIMA NARUMASA;ISHIKAWA TSUYOSHI |
分类号 |
H01L29/24 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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