| 发明名称 |
METHOD FOR FORMING INTERLAYER DIELECTRIC FILM, SEMICONDUCTOR DEVICE AND APPARATUS FOR PRODUCING SEMICONDUCTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a device by suppressing change with time in an interlayer dielectric film in a semiconductor device. <P>SOLUTION: A residence time of gas molecules in a chamber is shortened to prevent depositing of monomer decomposition products to a film surface at the end of film formation. Also, the monomer decomposition products deposited on the surface are removed by treating the surface with inactive gas plasma. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012138614(A) |
申请公布日期 |
2012.07.19 |
| 申请号 |
JP20120064867 |
申请日期 |
2012.03.22 |
| 申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
YAMAMOTO HIROKI;ITO FUMINORI;HAYASHI YOSHIHIRO |
| 分类号 |
H01L21/316;C23C14/12;C23C14/58;C23C16/42;C23C16/50;C23C16/56;H01L21/768;H01L23/532 |
主分类号 |
H01L21/316 |
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