| 摘要 |
A power semiconductor package structure includes a carrier, a first power chip, a second power chip, a first conductive sheet, a second conductive sheet and a third conductive sheet. The first power chip has a first surface and a second surface opposing to the first surface. A first control electrode and a first main power electrode are disposed on the first surface, and a second main power electrode is disposed on the second surface. The second surface is disposed on the carrier, and electrically connected to the carrier through the second main power electrode. The second power chip has a third surface and a fourth surface opposing to the third surface. A third main power electrode is disposed on the third surface, and a fourth main power electrode is disposed on the fourth surface. The fourth surface is disposed on the first power chip. The first conductive sheet is electrically connected to the first main power electrode and the fourth main power electrode. The second conductive sheet is electrically connected to the third main power electrode. The third conductive sheet is electrically connected to the first control electrode. At least a part of the first control electrode is non-covered by the second power chip along a projection direction, which is perpendicular to the carrier.
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