| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a feed material for epitaxial growth of single crystal silicon carbide enabling to increase the epitaxial growth rate of silicon carbide. <P>SOLUTION: The feed material 11 for epitaxial growth of single crystal silicon carbide has a surface layer including polycrystalline silicon carbide whose crystal polymorph is 3C. Through X-ray diffractometry of the surface layer, a primary diffraction peak corresponding to at least one of (111) crystal plane, (200) crystal plane, (220) crystal plane and (311) crystal plane is observed. The average crystallite diameter calculated from the at least one primary diffraction peak is smaller than 700 Å. <P>COPYRIGHT: (C)2012,JPO&INPIT |
