发明名称 SUBSTRATE TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate treatment device, securable of a long-time large amount supply of raw material gas. <P>SOLUTION: The substrate treatment device includes: a treatment chamber for housing and treating a wafer; a bubbler 220a for vaporizing a liquid raw material by bubbling with a carrier gas; and a raw material gas supply pipe 213a for supplying the raw material gas generated by vaporizing the liquid raw material in the bubbler 220a into the treatment chamber. The bubbler 220a includes a container for storing the liquid raw material, and a carrier gas supply pipe 237a for supplying the carrier gas into the liquid raw material, a tip portion of the carrier gas supply pipe being dipped in the liquid raw material stored in the container. A diffusion plate 238 for horizontally diffusing the carrier gas supplied into the liquid raw material through the carrier gas supply pipe 237a is laid on the bottom within the bubbler 220a, and the diffusion plate 237 has a plurality of ejection holes 239 to eject the horizontally diffused carrier gas upward from a plurality of positions. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012136743(A) 申请公布日期 2012.07.19
申请号 JP20100290515 申请日期 2010.12.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ITAYA HIDEJI
分类号 C23C16/448;H01L21/285 主分类号 C23C16/448
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