Resin composition, embedding material, insulating layer and semiconductor device

摘要

The application concerns a semiconductor device (500) comprising:
a semiconductor substrate (10) having at least a through-hole (1) extending through the semiconductor substrate (10) in a thickness direction thereof, an inner surface defining the through-hole (1) and one surface (102) on which the through-hole (1) is opened;
an insulating layer including a first resin layer (31) formed so as to cover the inner surface defining the through-hole (1) and the one surface (102) of the semiconductor substrate (10), and a second resin layer (32) applied to the first resin layer (31); and
a conductive portion (6) provided in the through-hole (1) so as to pass through the first resin layer (31) and the second resin layer (32),
wherein an elastic modulus of the first resin layer (31) is lower than that of the second resin layer.