| 摘要 |
PURPOSE: A plasma processing apparatus is provided to obtain stable and uniform field intensity and an electric field point since the field intensity and the electric field point of an antenna are controlled by lifting and lowering the antenna. CONSTITUTION: A chamber(100) includes a process space for processing a substrate. A lead(120) is formed on the top of the chamber. A susceptor(110) is installed in order to mount the substrate which performs plasma processing in a bottom portion inside the chamber. An electrostatic chuck is installed in order to chuck the substrate in the susceptor. A plurality of antennas is installed in the lead of an upper portion of the chamber. The antennas comprise an antenna(200), a second antenna(300), and a third antenna(400). The first, second, and third antennas are formed into a short low inductance antenna.
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