发明名称 |
Double-sided substrate, semiconductor device and method for the same |
摘要 |
A double-sided substrate includes a ceramic substrate, a first metal layer formed on one surface of the ceramic substrate and having a plurality of subsidiary metal layers which are laminated on the surface of the ceramic substrate and whose purities differ from each other and a second metal layer formed on the other surface of the ceramic substrate, wherein the closer to the ceramic substrate any subsidiary metal layer is located, the lower purity the subsidiary metal layer has. Additionally, a semiconductor incudes the above double-sided substrate, a power element and a heat sink. |
申请公布号 |
EP2477218(A2) |
申请公布日期 |
2012.07.18 |
申请号 |
EP20120150715 |
申请日期 |
2012.01.11 |
申请人 |
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI |
发明人 |
MORI, SHOGO;IWATA, YOSHITAKA |
分类号 |
H01L23/373;C04B37/02 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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