发明名称 |
Method of reusing a consumable part for use in a plasma processing apparatus |
摘要 |
In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.
|
申请公布号 |
US8221579(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20100813819 |
申请日期 |
2010.06.11 |
申请人 |
NAGAYAMA NOBUYUKI;SATOH NAOYUKI;NAGAKUBO KEIICHI;NAGASEKI KAZUYA;TOKYO ELECTRON LIMITED |
发明人 |
NAGAYAMA NOBUYUKI;SATOH NAOYUKI;NAGAKUBO KEIICHI;NAGASEKI KAZUYA |
分类号 |
C23F1/00;H01L21/306 |
主分类号 |
C23F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|