发明名称 Method of reusing a consumable part for use in a plasma processing apparatus
摘要 In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.
申请公布号 US8221579(B2) 申请公布日期 2012.07.17
申请号 US20100813819 申请日期 2010.06.11
申请人 NAGAYAMA NOBUYUKI;SATOH NAOYUKI;NAGAKUBO KEIICHI;NAGASEKI KAZUYA;TOKYO ELECTRON LIMITED 发明人 NAGAYAMA NOBUYUKI;SATOH NAOYUKI;NAGAKUBO KEIICHI;NAGASEKI KAZUYA
分类号 C23F1/00;H01L21/306 主分类号 C23F1/00
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