发明名称 |
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride |
摘要 |
By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level. |
申请公布号 |
US8222135(B2) |
申请公布日期 |
2012.07.17 |
申请号 |
US20100894484 |
申请日期 |
2010.09.30 |
申请人 |
STRECK CHRISTOF;KAHLERT VOLKER;GLOBALFOUNDRIES INC. |
发明人 |
STRECK CHRISTOF;KAHLERT VOLKER |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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