发明名称 Metal-insulator-metal (MIM) devices and their methods of fabrication
摘要 Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
申请公布号 US8222077(B2) 申请公布日期 2012.07.17
申请号 US20070983205 申请日期 2007.11.06
申请人 CBRITE INC. 发明人 GONG XIONG;YANG KAIXIA;YU GANG;NILSSON BOO JORGEN LAR&SCIRC,;SHIEH CHAN-LONG;LEE HSING-CHUNG;FOONG FATT
分类号 H01L21/28 主分类号 H01L21/28
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