发明名称 System and Method for Preventing Bipolar Parasitic Activation in a Semiconductor Circuit
摘要 In an embodiment, a semiconductor device has a semiconductor body of a first semiconductor type, a first region of a second semiconductor type disposed in the semiconductor body, and a second region of the first semiconductor type disposed within the first region, where the second semiconductor type is opposite the first semiconductor type, and where an interface between the first region and the semiconductor body forms a first diode junction. The semiconductor device also has a comparator with a first input coupled to the semiconductor body and a second input coupled to the first region, and a switch having a first output node coupled to the first region, and a second output node coupled to the semiconductor body. The semiconductor body, the first region and the second region are configured to be coupled to a first supply voltage, a second supply voltage, and a third supply voltage, respectively.
申请公布号 US2012176161(A1) 申请公布日期 2012.07.12
申请号 US201113004722 申请日期 2011.01.11
申请人 PETRUZZI LUCA 发明人 PETRUZZI LUCA
分类号 H03K5/24 主分类号 H03K5/24
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