EPITAXIAL GROWTH SUBSTRATE AND GaN LED DEVICE

摘要

The main purpose of the present invention is to provide a novel epitaxial growth substrate for use in a GaN LED device, the substrate having an improvement effect on light extraction efficiency in line with that of PSS. An embodiment of this invention includes an epitaxial growth substrate for use in a GaN LED device. In one example, the epitaxial growth substrate has a growth mask layer that includes a monocrystal substrate and a dielectric substance having a lower refractive index than that of the GaN; the growth mask layer has a through-hole that passes through the growth mask layer in the thickness direction and has a cross-sectional area which increases in progression away from the monocrystal substrate; and a plurality of the through-holes is arranged so that any one through-hole has at least three others that are adjacent. When two adjacent holes are arbitrarily selected from the plurality of the through-holes thus arranged, and one is set as a first through-hole and the other is set as a second through-hole, the side wall of the first through-hole and the side wall of the second through-hole abut each other.