METHOD OF MANUFACTURING TRANSISTOR

摘要

PURPOSE: A method for manufacturing a transistor is provided to easily manufacture a transistor by arranging a high quality synthesized nano structure on a desired location with a desired shape by a self assembly method. CONSTITUTION: A gate(G1) is formed. A channel layer(C1) is formed on the gate. The gate and the channel layer are separated. A gate insulating layer(GI1) is formed between the gate and the channel layer. The gate insulating layer is formed between a source(S1) and a drain(D1) for surrounding the channel layer.