| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate for the production of an SOI structure which allows a high flexibility to adjust the lattice dimensions of an insulator layer for the lamination of either fully relaxed or strained semiconductor layers including a variety of materials with high crystalline quality. <P>SOLUTION: A semiconductor wafer comprises, in the description order, a monocrystalline substrate wafer 1 substantially composed of silicon, a first amorphous intermediate layer 2 including an electrically insulating material having a thickness of 2 nm to 100 nm, and a monocrystalline first oxide layer 3 having a cubic system Ia-3 crystal structure, a composition of (Me1<SB POS="POST">2</SB>O<SB POS="POST">3</SB>)<SB POS="POST">-1-x</SB>(Me2<SB POS="POST">2</SB>O<SB POS="POST">3</SB>)<SB POS="POST">x</SB>, and a lattice constant which differs from the lattice constant of the material of the substrate wafer by 0% to 5%. <P>COPYRIGHT: (C)2012,JPO&INPIT |
