| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a resist pattern with high resolution using immersion exposure, while preventing degeneration of a resist film during immersion exposure using various kinds of immersion liquids including water as well as preventing degeneration of the immersion liquid used, without increasing the number of processes, in an immersion exposure process, particularly, an immersion exposure process that increases resolution of a resist pattern by exposing a resist film while allowing a liquid of a predetermined thickness having a refractive index higher than that of air and lower than that of the resist film, to be present at least on the resist film in the route of lithography exposure light to reach the resist film. <P>SOLUTION: A protective film having such characteristics as having substantially no compatibility with a liquid, particularly water, in which a resist film is to be immersed, and being soluble with an alkali, is formed on the surface of the resist film to be used. <P>COPYRIGHT: (C)2012,JPO&INPIT |
