| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material, particularly a chemically amplified positive resist material, having a high effect for suppressing diffusion of an acid, having high resolution and giving a good pattern profile and edge roughness after light exposure, and thereby being suitable as a material for manufacturing a VLSI or for forming a fine pattern of a photomask material by EB drawing, or as a pattern forming material for EUV light exposure. <P>SOLUTION: The positive resist material comprises, as a base resin, a polymer compound which includes a repeating unit in which a hydrogen atom in a carboxyl group and/or a phenolic hydroxyl group is substituted with an acid labile group, and a repeating unit having a group expressed by general formula (1), and which has a weight average molecular weight in the range from 1,000 to 500,000. In the formula, each of X and Y represents CH or a nitrogen atom; m is 1 or 2; R<SP POS="POST">1</SP>represents a hydrogen atom or a 1-4C alkyl group; and n is 0 or 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
