发明名称 PRODUCING TRANSISTOR INCLUDING MULTIPLE REENTRANT PROFILES
摘要 A method of producing a transistor includes providing a substrate including in order a first electrically conductive material layer and a second electrically conductive material layer. A resist material layer is deposited over the second electrically conductive material layer. The resist material layer is patterned to expose a portion of the second electrically conductive material layer. Some of the second electrically conductive material layer is removed to create a reentrant profile in the second electrically conductive material layer and to expose a portion of the first electrically conductive material layer. The second electrically conductive material layer is caused to overhang the first electrically conductive material layer by removing some of the first electrically conductive material layer.
申请公布号 US2012178246(A1) 申请公布日期 2012.07.12
申请号 US20110986236 申请日期 2011.01.07
申请人 TUTT LEE W.;NELSON SHELBY F. 发明人 TUTT LEE W.;NELSON SHELBY F.
分类号 H01L21/20;H01L21/441 主分类号 H01L21/20
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