| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a level shift circuit that forms a high voltage circuit without using a high voltage process. <P>SOLUTION: The level shift circuit having a latch circuit (22) having a pair of CMOS inverters and cross-linking an output node of one inverter to a gate terminal of a P-channel MOS transistor of the other inverter, and an output stage (23) comprising a CMOS inverter connected to either output node of the latch circuit includes P-channel MOS transistors (Mp4, Mp5) connected in series between P-channel MOS transistors (Mp1, Mp2) and N-channel MOS transistors (Mn1, Mn2) of the pair of CMOS inverters constituting the latch circuit, respectively, so as to have a gate terminal connected to a third voltage terminal (FGND) receiving an intermediate potential between a supply voltage and a ground potential. <P>COPYRIGHT: (C)2012,JPO&INPIT |
