| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the manufacturing cost and to improve the reliability of a semiconductor device. <P>SOLUTION: A deposition device comprises: a stage 53 supporting a semiconductor wafer SW; a target 54 facing the semiconductor wafer SW; a collimator 61 disposed between the semiconductor wafer SW and the target 54; and a lower shield 62 and a dark-space shield 63 surrounding the space between the semiconductor wafer SW and the target 54 and the collimator 61. Using the deposition device, a Ni-Pt alloy film is formed on the semiconductor wafer SW by a sputtering method. At this time, although an Al film 71 is preliminarily formed in the region located above a bottom surface 61b of the collimator 61 in the inner surfaces of the lower shield 62 and the dark-space shield 63, the Al film 71 is not formed in the region located below the bottom surface 61b of the collimator 61. The Al film 71 is dissolved by alkali solution in removing the lower shield 62 and the dark-space shield 63 for washing. <P>COPYRIGHT: (C)2012,JPO&INPIT |
