发明名称 |
STACKED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>PURPOSE: A stacked semiconductor device and manufacturing method thereof are provided to extend a size of cache without widening a chip area of microprocessor by controlling DRAM(Dynamic Random Access Memory) with a memory controller. CONSTITUTION: A second chip is arranged on a first chip through a first Through Silicon Via(TSV1). The second chip includes a first memory and memory controller(30). The first memory and memory controller are controlled each by the first chip. A second memory is arranged on the second chip through a second Through Silicon Via(TSV2). The second memory is controlled by the memory controller.</p> |
申请公布号 |
KR20120079397(A) |
申请公布日期 |
2012.07.12 |
申请号 |
KR20110000649 |
申请日期 |
2011.01.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JANG SEOK;JUNG, JU YUN |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|