发明名称 |
Method of manufacturing light emitting diode |
摘要 |
<p>There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer (102) and an undoped nitride semiconductor layer (103) on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer (104) on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.</p> |
申请公布号 |
EP2475016(A2) |
申请公布日期 |
2012.07.11 |
申请号 |
EP20120150121 |
申请日期 |
2012.01.04 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
LEE, DONG JU;LEE, HEON HO;SHIM, HYUN WOOK;KIM, YOUNG SUN |
分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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