ULTRAVIOLET LIGHT IRRADIATION DEVICE

摘要

Disclosed is an ultraviolet irradiation device that has a simple structure making no use of pn junction, can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at high efficiency. The ultraviolet irradiation device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and vacuum-sealed, wherein the semiconductor multilayer film element has an active layer formed of In x Al y Ga 1-x-y N (wherein 0 ‰¤ x < 1, 0 < y x + y ‰¤ 1) and having a single quantum well structure or a multiple quantum well structure and a metal film formed on an upper surface of the active layer, composed of metal particles of aluminum or an aluminum alloy and having a nano-structure formed of the metal particles, and ultraviolet light is emitted to the outside through the ultraviolet-ray transmitting window by irradiating the semiconductor multilayer film element with the electron beams from the electron beam irradiation source.