发明名称 Method of producing a microelectromechanical (MEMS) sensor device
摘要 A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).
申请公布号 US8216882(B2) 申请公布日期 2012.07.10
申请号 US20100861509 申请日期 2010.08.23
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 LIN YIZHEN;PARK WOO TAE;SCHLARMANN MARK E.;DESAI HEMANT D.
分类号 H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/44
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