发明名称 |
Phase-change and resistance-change random access memory devices and related methods of performing burst mode operations in such memory devices |
摘要 |
Phase-change and resistance-change random access memory devices are provided which include a phase-change or resistance-change memory cell array and a sense amplifier that is configured to amplify data read from the phase-change memory cell array. These random access memory devices are configured to read data from a first word line of the phase-change or resistance-change memory cell array and to insert a dummy burst in which no data is read when a first boundary crossing occurs during a burst mode operation. Related methods of operating phase-change and/or resistance-change random access memory devices in burst mode are also provided. |
申请公布号 |
US8218360(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20090582880 |
申请日期 |
2009.10.21 |
申请人 |
LEE KWANG-JIN;MOON YOUNG-KUG;KIM YOUNG-PIL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KWANG-JIN;MOON YOUNG-KUG;KIM YOUNG-PIL |
分类号 |
G11C11/00;G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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