发明名称 |
Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate |
摘要 |
A method for producing a silicon carbide layer on a surface of a silicon substrate includes the step of irradiating the surface of the silicon substrate heated in a high vacuum at a temperature in a range of from 500° C. to 1050° C. with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface. |
申请公布号 |
US8216367(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20060921929 |
申请日期 |
2006.05.23 |
申请人 |
UDAGAWA TAKASHI;SHOWA DENKO K.K. |
发明人 |
UDAGAWA TAKASHI |
分类号 |
C30B25/02 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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