| 摘要 |
FIELD: physics. ^ SUBSTANCE: semiconductor device, having a housing with an IC chip, an insert made from material with shape memory effect lying inside the housing of the device such that upon detection of temperature change due to violation of the integrity of the housing of the semiconductor device, the chip breaks down. The insert made from material with shape memory effect has transformation temperature higher than the maximum operating temperature of the device. The inside of the device is filled with polymerised filler with softening temperature higher than the transformation temperature of said insert with shape memory effect, and the transformed shape of the insert is selected such that upon transformation, the chip breaks on at least two nonparallel axes. ^ EFFECT: improved quality of destruction of the device chip due to breakage of the chip into a large number pieces. ^ 3 cl, 2 dwg |
