| 摘要 |
PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to reduce the change of resistance and an occupied area of a register when forming the register for voltage distribution by laminating a plurality of memory cells in a vertical direction. CONSTITUTION: A substrate(200) which includes a cell region and a peripheral circuit region is prepared. A peripheral circuit unit(210) is formed on the substrate of the peripheral circuit region. First to third peripheral circuit elements are formed on the substrate of the peripheral circuit region. A memory cell unit(220) is formed on the substrate of the cell region. A gate electrode(230A) of a top selecting transistor is formed on the memory cell unit of the cell region. A conductive layer pattern(230B) is formed on the peripheral circuit unit of the peripheral circuit region. |
