发明名称 |
STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUDING A HIGH K DIELECTRIC |
摘要 |
Threshold voltage controlled semiconductor structures are provided in which a conformal nitride-containing liner is located on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-containing liner is a thin layer that is formed using a low temperature (less than 500° C.) nitridation process. |
申请公布号 |
US2012168874(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201213409693 |
申请日期 |
2012.03.01 |
申请人 |
FANG SUNFEI;GREENE BRIAN J.;LEOBANDUNG EFFENDI;LIANG QINGQING;MACIEJEWSKI EDWARD P.;WANG YANFENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FANG SUNFEI;GREENE BRIAN J.;LEOBANDUNG EFFENDI;LIANG QINGQING;MACIEJEWSKI EDWARD P.;WANG YANFENG |
分类号 |
H01L27/092;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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