发明名称 |
METHOD AND CVD FOR THE GROWTH OF GAN-BASED LED |
摘要 |
PURPOSE: A chemical vapor depositing apparatus for growing a gallium nitride based LED thin film and a chemical vapor depositing method are provided to increase a processing amount per unit time by loading susceptors with a plurality of stages on a boat. CONSTITUTION: A process tube(100) comprises an inner tube(102) and an outer tube(104). The inner tube receives a boat(200) for loading a plurality of substrates(S). A heater assembly surrounds the process tube. A gas supply unit(400) includes a gas supply line(402), a raw gas supply source(412), a reaction gas supply source(414), and a purge gas supply source(416). The raw gas supply source is connected to three branch lines.
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申请公布号 |
KR20120073783(A) |
申请公布日期 |
2012.07.05 |
申请号 |
KR20100135646 |
申请日期 |
2010.12.27 |
申请人 |
KOOKJE ELECTRIC KOREA CO., LTD. |
发明人 |
JEON, SE WOOK;KIM, KI HOON;LEE, JA HYUK |
分类号 |
H01L21/205;C23C16/448 |
主分类号 |
H01L21/205 |
代理机构 |
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主权项 |
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地址 |
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