| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent buckling of a support beam or the like caused by external stress, and to eliminate output fluctuation caused by a temperature change. <P>SOLUTION: A fixed part 41 is formed by a second silicon layer 13 of a SOI wafer 10, a movable electrode 43 displaceably supported on the fixed part 41 via a support beam 42 is formed, and an upper frame 44 is formed to surround the movable electrode 43. Fixed electrodes 45 and 46 are formed by a first silicon layer 11, and a lower frame 47 is formed to surround the fixed electrodes 45 and 46 via a groove 48. The movable electrode 43 includes an electrode part 43a, and the fixed electrodes 45 and 46 include connection parts 45a, 45b, 46a, and 46b that are along two opposed sides of the lower frame 47, electrode parts 45c and 46c formed between the connection parts, and mounting parts 45e and 46e supported between the connection parts. The fixed part 41 is bonded to the mounting parts 45e and 46e via an oxide film 12, and the lower frame 47 and the connection parts are bonded to the upper frame 44 via the oxide film 12. The lower frame 47 is used as an adhesion fixing part during substrate mounting. <P>COPYRIGHT: (C)2012,JPO&INPIT |
