METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT METHOD, AND SUBSTRATE TREATMENT DEVICE

摘要

The present invention has a step for forming an oxynitride film in which a step for supplying to a substrate that has been heated in a treatment vessel a starting material gas under conditions in which a thermal decomposition reaction arises for the starting material gas and forming a layer containing a prescribed element, a step for supplying a gas containing nitrogen to this substrate that has been heated in the treatment vessel that is under a pressure less than atmospheric pressure and converting the layer containing the prescribed element to a nitride layer, and a step for supplying a gas containing oxygen to this substrate that has been heated in the treatment vessel that is under a pressure less than atmospheric pressure and converting the nitride layer into an oxynitride layer are repeated alternately with a step for purging the inside of the treatment vessel therebetween. In the step for forming the layer containing the prescribed element, an inert gas or a gas containing hydrogen is supplied through a nozzle when the starting material gas is supplied toward the substrate through the nozzle, which is provided on the substrate side, and the starting material gas is blown in a direction parallel to the substrate surface more strongly than an inert gas is blown in the direction parallel to the surface of the substrate in the step for purging the inside of the treatment vessel.