LAMINATE STRUCTURE INCLUDING OXIDE SEMICONDUCTOR THIN FILM LAYER, AND THIN FILM TRANSISTOR

摘要

Provided is a laminate structure comprising an oxide layer and an insulating layer, the laminate structure being characterized in that the carrier density of the oxide layer is 1018/cm3 or less and the average crystal particle diameter thereof is 1 µm or higher, and the crystals of the oxide layer are arranged in a columnar shape on the surface of the insulating layer.