<p>A method for producing a transistor, comprises the following steps: providing a semiconductor substrate (200); forming a stacked grate (210) on a surface of the semiconductor substrate (200); forming an insulating layer (220) on the surface of the semiconductor substrate (200); forming a consumption layer (230) on a surface of the insulating layer (220); etching the insulating layer (220) and the consumption layer (230); forming a metal layer (250) on the surface of the semiconductor substrate (200); thermal annealing; and removing the metal layer (250). An outer side part of an upper part of a side wall used is made of a material capable of reacting with the metal layer (250), and thus being capable of absorbing the metal layer at two sides of the side wall in the annealing process, so as to avoid the dispersion of the metal layer to the semiconductor layer, and ensure the formation of a Schottky junction that is ultra-thin and uniform in a longitudinal direction and is controllable and suppressed in growth in a horizontal direction.</p>
