BASE MATERIAL PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a base material processing method capable of forming a thin film of uniform film thickness having excellent adhesion between a support base material and a base material using a temporarily fixing agent when temporarily fixing the base material onto the support base material and processing the base material and resultantly processing a base material with excellent accuracy.

SOLUTION: A base material processing method comprises: a first step of supplying a temporarily fixing agent to one surface of a support base material 1 in a spin coating method and forming a sacrificial layer (thin film) 2 by drying the temporarily fixing agent; a second step of bonding a semiconductor wafer 3 and the support base material 1 via the sacrificial layer 2; a third step of processing a surface on the side opposite to a functional surface 31 of the semiconductor wafer 3; and a fourth step of detaching the semiconductor wafer 3 from the support base material 1 by thermally decomposing a resin component by heating the sacrificial layer 2. The support base material 1 is set so that an affinity to the temporarily fixing agent almost equals an affinity to the temporarily fixing agent of the functional surface 31.

COPYRIGHT: (C)2012,JPO&INPIT