发明名称 |
METHOD OF COUPLING SEMICONDUCTOR STRUCTURES DIRECTLY TO EACH OTHER, AND COUPLED SEMICONDUCTOR STRUCTURE FORMED BY USING THAT METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of coupling semiconductor structures directly to each other. <P>SOLUTION: A method of coupling semiconductor structures directly to each other is provided. A cap layer can be provided on the interface between the directly coupled metal features of a semiconductor structure. Impurities are provided in the directly coupled metal features of a semiconductor structure. A coupled semiconductor structure is formed using such a method. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012129521(A) |
申请公布日期 |
2012.07.05 |
申请号 |
JP20110260461 |
申请日期 |
2011.11.29 |
申请人 |
SOYTEC |
发明人 |
MARIAM SADAKA |
分类号 |
H01L21/768;H01L21/603;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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