发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD AND EXPOSURE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To enhance exposure characteristics. <P>SOLUTION: The exposure device comprises a light-emitting section (10) which emits EUV light by plasma excitation of predetermined atoms, a condensation section (20) which condenses the EUV light irradiated from the light-emitting section, an exposure section (30) which irradiates a substrate with the EUV light condensed by the condensation section through a mask, a first plasma position monitor (11a) which detects the light-emitting point of the EUV light in the light-emitting section, and a light-emitting section driver (13) which adjusts the position of the light-emitting section. A first amount of positional shift between the light-emitting point detected by the plasma position monitor and a light-emitting reference position is determined, and the light-emitting section driver is driven based on the first amount of positional shift. Furthermore, an exposure device is used which has a first condensation position monitor (21a) for detecting the position of condensation point of the EUV light condensed by the condensation section, and which has a condensation section driver (23) which adjusts the position of the condensation section. A second amount of positional shift between the condensation point and a reference condensation point is calculated, and the condensation section driver (23) is driven based on the calculation result of the second amount of positional shift. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012129345(A) 申请公布日期 2012.07.05
申请号 JP20100279065 申请日期 2010.12.15
申请人 RENESAS ELECTRONICS CORP 发明人 SHIRAI SEIICHIRO
分类号 H01L21/027;G02B19/00;G21K1/06 主分类号 H01L21/027
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