| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a magnetic memory using a spin torque which can obtain vertical magnetization in heat treatment at a temperature in a range from about 300°C to 400°C and can be easily manufactured in a semiconductor process. <P>SOLUTION: A memory element comprises a memory layer 17 having magnetization perpendicular to a film surface and a direction of magnetization changed corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film surface, which serves as a reference of information stored in the memory layer 17 and an insulation layer 16 of an oxide provided between the memory layer 17 and the magnetization fixed layer 15. At least one of the memory layer and the magnetization fixed layer is formed such that an Fe film and an Ni-contained film sequentially formed from the side of an interface bordering the insulation layer and a graded composition distribution in which a composition ratio of Fe to Ni on the interface side is larger is formed after heat treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
