| 摘要 |
<p>Various methods are provided for leakage reduction via optimized reset states and improving performance for storage elements. The methods include selecting a storage element, where the storage element comprises at least one storage element component sized to reduce static current leakage or at least one storage element component adapted to increase at least one of speed or performance of the storage element. The methods also call for determining a preferred reset state for the storage element, wherein the preferred reset state is based at least upon the reduction of static current leakage, the speed or the performance of the storage element. The methods also call for setting the storage element reset state to the preferred reset state. An additional method calls for determining if a storage element spends a predetermined amount of time in a static state, and determining a preferred reset state for the storage element based upon at least the static state in which the storage element spends the at least a predetermined amount of time. The additional method also calls for setting a preferred reset state based at least upon the static state in which the storage element spends the at least a predetermined amount of time.</p> |
