发明名称 |
SIC SINGLE CRYSTAL WAFER AND PROCESS FOR PRODUCTION THEREOF |
摘要 |
<p>A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0 x 10 17 atoms/cm 3 . This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.</p> |
申请公布号 |
EP2471981(A1) |
申请公布日期 |
2012.07.04 |
申请号 |
EP20100811980 |
申请日期 |
2010.08.27 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD. |
发明人 |
KUSUNOKI KAZUHIKO;KAMEI KAZUHITO;YASHIRO NOBUYOSHI;KOIKE JUNICHI |
分类号 |
C30B29/36;C30B19/04;H01L21/02 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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