Mask for scattering-type charged-particle beam lithography, charged-particle beam lithography apparatus comprising the same, and lithography process using the same

摘要

An improved, scattering-type mask for use in a charged-particle beam lithography process comprises the mask having a membrane portion and a scattering portion, the membrane portion being fabricated with a conductive material or a plurality of materials in which one of them is conductive. The conductive nature of the membrane portion mitigates the accumulation of charge in the mask, thereby enhancing the definition of the charged-particle pattern transferred from the mask onto the wafer under fabrication and reducing the distortion obtained with the system.