| 摘要 |
PURPOSE: A bridge diode of an LED lighting apparatus is provided to ensure the minimum size because a part of the bridge diode formed in the same substrate a semiconductor device for driving an LED and the rest formed as a separate external device are assembled into a single package. CONSTITUTION: A first N-type layer(32A) and a second N-type layer(32B) are formed on two sides of the top of a P-type silicon substrate(31). An insulating layer(33) is formed in the whole surfaces except for the open surfaces of the P-type silicon substrate and the first and second N-type layers. A metal electrode(34) is formed on the top of the insulating layer. A first P-type layer(36A) and a second P-type layer(36B) are formed on the top of an N-type silicon substrate(35). The metal electrode and the N-type silicon substrate are attached using a conductive epoxy adhesive(37). The first N-type layer and the first P-type layer are bonded to a first bonding pad(39A) through respective bonding wires(38). The second N-type layer and the second P-type layer are bonded to a first bonding pad(39B) through respective bonding wires. |
