发明名称 SYSTEM AND METHOD FOR MANUFACTURING SILICON CARBIDE PULVERULENT BODY
摘要 Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300° C. and equal to and less than 1900° C.
申请公布号 EP2470473(A2) 申请公布日期 2012.07.04
申请号 EP20100812298 申请日期 2010.08.26
申请人 LG INNOTEK CO., LTD. 发明人 KIM, BYUNGSOOK;HAN, JUNGEUN;KIM, SANGMYUNG
分类号 C01B31/36;B82Y30/00;C04B35/565;C04B35/573;C04B35/626;C04B35/634 主分类号 C01B31/36
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