发明名称 |
SYSTEM AND METHOD FOR MANUFACTURING SILICON CARBIDE PULVERULENT BODY |
摘要 |
Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300° C. and equal to and less than 1900° C. |
申请公布号 |
EP2470473(A2) |
申请公布日期 |
2012.07.04 |
申请号 |
EP20100812298 |
申请日期 |
2010.08.26 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KIM, BYUNGSOOK;HAN, JUNGEUN;KIM, SANGMYUNG |
分类号 |
C01B31/36;B82Y30/00;C04B35/565;C04B35/573;C04B35/626;C04B35/634 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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