| 摘要 |
The method is to fabricate a microelectronic device with an integrated antenna. This method may include forming at least a first semiconducting layer on a substrate, forming in at least one zone of the first semiconducting layer of a structure to limit the circulation of current in the zone of the first semiconducting layer, forming a plurality of layers on the semiconducting layer and at least one antenna in the plurality of layers, with the antenna being formed opposite the zone. The antenna may be operable at radio frequencies above 10 GHz, and may have an improved emission efficiency.
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