| 摘要 |
PURPOSE: A plasma processing apparatus and an antenna thereof are provided to improve plasma uniformity at a center portion and an outer portion inside a chamber by controlling an RF current in an antenna located at the outside. CONSTITUTION: A lead includes a lead frame(210) formed into a grid format, a window(220) arranged on an upper portion of the lead frame, and an antenna arranged on an upper portion of the window. The lead frame includes an outer frame part(211) and an inner frame part(212). The antenna includes a center antenna(310) and a peripheral antenna(320). The center antenna includes a first central branched antenna(311) and a second central branched antenna(312). The peripheral antenna includes a first peripheral branched antenna(321), a second peripheral branched antenna(322), a third peripheral branched antenna(323), and a fourth peripheral branched antenna(324). |
