发明名称 CYCLIC CARBOSILANE DIELECTRIC FILMS
摘要 <p>Embodiments of the invention provide dielectric films and low k dielectric films and methods for making dielectric and low k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.</p>
申请公布号 WO2012087750(A1) 申请公布日期 2012.06.28
申请号 WO2011US65196 申请日期 2011.12.15
申请人 INTEL CORPORATION;MICHALAK, DAVID J.;BLACKWELL, JAMES M.;CLARKE, JAMES S. 发明人 MICHALAK, DAVID J.;BLACKWELL, JAMES M.;CLARKE, JAMES S.
分类号 H01L21/31 主分类号 H01L21/31
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