<p>Embodiments of the invention provide dielectric films and low k dielectric films and methods for making dielectric and low k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.</p>
申请公布号
WO2012087750(A1)
申请公布日期
2012.06.28
申请号
WO2011US65196
申请日期
2011.12.15
申请人
INTEL CORPORATION;MICHALAK, DAVID J.;BLACKWELL, JAMES M.;CLARKE, JAMES S.
发明人
MICHALAK, DAVID J.;BLACKWELL, JAMES M.;CLARKE, JAMES S.