发明名称 |
High-K Metal Gate Electrode Structures Formed by Cap Layer Removal Without Sacrificial Spacer |
摘要 |
In sophisticated semiconductor devices, high-k metal gate electrode structures may be formed in an early manufacturing stage with superior integrity of sensitive gate materials by providing an additional liner material after the selective deposition of a strain-inducing semiconductor material in selected active regions. Moreover, the dielectric cap materials of the gate electrode structures may be removed on the basis of a process flow that significantly reduces the degree of material erosion in isolation regions and active regions by avoiding the patterning and removal of any sacrificial oxide spacers. |
申请公布号 |
US2012161243(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201113198107 |
申请日期 |
2011.08.04 |
申请人 |
KRONHOLZ STEPHAN;LENSKI MARKUS;THEES HANS-JUERGEN;GLOBALFOUNDRIES INC. |
发明人 |
KRONHOLZ STEPHAN;LENSKI MARKUS;THEES HANS-JUERGEN |
分类号 |
H01L27/092;H01L21/8234 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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