发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing influences by plasma damage in a production step for a semiconductor device and suppressing variation in a threshold voltage to have a uniform display characteristic. <P>SOLUTION: A semiconductor device has: a planarized layer provided on a transistor; and a barrier layer provided on an upper surface or a lower surface of the planarized layer, and suppressing diffusion of moisture or degassing components from the planarized layer. By devising a positional relationship between the planarized layer and the barrier layer, a device structure that is effective for reducing plasma damage reaching the planarized layer is used. In addition, by a combination of the device structure and a new structure as a pixel electrode structure, effects such as improvement in the brightness can be also added. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012124494(A) |
申请公布日期 |
2012.06.28 |
申请号 |
JP20110279488 |
申请日期 |
2011.12.21 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;MURAKAMI TOMOHITO;OSAME MITSUAKI |
分类号 |
H01L21/336;G09F9/30;H01L21/00;H01L21/768;H01L23/522;H01L27/32;H01L29/04;H01L29/786;H01L31/0336;H01L31/036;H01L31/0376;H01L31/20;H01L51/50;H05B33/12;H05B33/14;H05B33/22 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|