发明名称 SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing influences by plasma damage in a production step for a semiconductor device and suppressing variation in a threshold voltage to have a uniform display characteristic. <P>SOLUTION: A semiconductor device has: a planarized layer provided on a transistor; and a barrier layer provided on an upper surface or a lower surface of the planarized layer, and suppressing diffusion of moisture or degassing components from the planarized layer. By devising a positional relationship between the planarized layer and the barrier layer, a device structure that is effective for reducing plasma damage reaching the planarized layer is used. In addition, by a combination of the device structure and a new structure as a pixel electrode structure, effects such as improvement in the brightness can be also added. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012124494(A) 申请公布日期 2012.06.28
申请号 JP20110279488 申请日期 2011.12.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;MURAKAMI TOMOHITO;OSAME MITSUAKI
分类号 H01L21/336;G09F9/30;H01L21/00;H01L21/768;H01L23/522;H01L27/32;H01L29/04;H01L29/786;H01L31/0336;H01L31/036;H01L31/0376;H01L31/20;H01L51/50;H05B33/12;H05B33/14;H05B33/22 主分类号 H01L21/336
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