| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming a trench isolation using a formation step of a MOS transistor. <P>SOLUTION: A manufacturing method of a semiconductor device having a DTI layer 20 and a MOS transistor on a silicon substrate 1 forms a deep trench on the silicon substrate 1, forms a gate oxide film 13 of a PMOS transistor 50 by thermally oxidizing the silicon substrate 1 on which the trench is formed, and at the same time forms a SiO<SB POS="POST">2</SB>film 14 on an inner surface of the trench. Then, the manufacturing method accumulates a polysilicon film 15 on the silicon substrate 1 so as to embed the trench, and patterns this polysilicon film 15. This forms a gate electrode 17 of the PMOS transistor 50 and at the same time forms the DTI layer 20 including the SiO<SB POS="POST">2</SB>film 14 and a polysilicon film 18 in the trench. <P>COPYRIGHT: (C)2012,JPO&INPIT |
