| 摘要 |
Methods of fabricating semiconductor structures include forming a plurality of openings extending through a semiconductor material and at least partially through a metal material and deforming the metal material to relax a remaining portion of the semiconductor material. The metal material may be deformed exposing the metal material to a temperature sufficient it to alter (i.e., increase) its ductility. The metal material may be formed from one or more of hafnium, zirconium, yttrium and a metallic glass. Another semiconductor material may be deposited over the remaining portions of the semiconductor material, and a portion the metal material may be removed from between each of the remaining portions of the semiconductor material. Semiconductor structures may be formed using such methods. |
